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dc.contributor.authorBayram, Can
dc.date2010/2012
dc.date.accessioned2017-10-27T19:36:43Z
dc.date.available2017-10-27T19:36:43Z
dc.date.issued2011
dc.identifier.citationBayram, Can.(2011). III-Nitride Optoelectronic Devices: From ultraviolet detectors and visible emitters towards terahertz intersubband devices.(Link Foundation Fellowship Final Reports: Energy Program.) Retrieved from The Scholarship Repository of Florida Institute of Technology website: https://repository.lib.fit.edu/en_US
dc.identifier.urihttp://hdl.handle.net/11141/2148
dc.descriptionIII-Nitride, optic, electric, illumination, spectrum, ultraviolet,en_US
dc.description.abstractWe review III-Nitride optoelectronic device technologies with an emphasis on recent breakthroughs achieved with the co-support of Link Foundation Energy Fellowship. We start with a brief summary of historical accomplishments and then report the state-of-the-art contributions in three key spectral regimes: Ultraviolet, Visible, and Near-, mid infrared, and terahertz. We also describe future trends and possible prospects in III-Nitride optoelectronic devices made possible with the fellow's work.en_US
dc.language.isoen_USen_US
dc.rights© 2011. the authoren_US
dc.rights.urihttps://repository.lib.fit.edu/handle/11141/1665en_US
dc.titleIII-Nitride Optoelectronic Devices: From Ultraviolet detectors and visible emitters towards terahertz intersubband devices.en_US
dc.typeTechnical Reporten_US
thesis.degree.levelDoctoral
thesis.degree.disciplineElectrical Engineering and Computer Science
thesis.degree.grantorNorthwestern University


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