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dc.contributor.authorSungkwon, Lee
dc.contributor.authorThomas, Jayan Sanders
dc.date.accessioned2017-10-05T13:12:21Z
dc.date.available2017-10-05T13:12:21Z
dc.date.issued1997-09-11
dc.identifier.citationSungkwon, L., & Thomas, J. S. (1997). STADIUM SOI/reliability simulator for the analysis of hot-electron and ESD induced degradation in non-isothermal device. Paper presented at the Proceedings of SPIE - the International Society for Optical Engineering, , 3216 104-113.en_US
dc.identifier.urihttp://hdl.handle.net/11141/1752
dc.descriptionElectrostatic discharge, Hot-electron effect, Reliability, STADIUM, SOIen_US
dc.description.abstractThis paper addresses the integrated circuit industry needs for non-isothermal simulation in device reliability analysis, initial input factor sensitivity analysis and their software implementation. The key reliability issues are the hot-electron induced oxide damages and electro-static discharge (ESD) damages. The main purpose of this work is to provide a design aid tool to improve device reliability and performance. The reliability simulator developed in this work not only predicts designed device reliability, but also provides some information about the effect of manufacturing variations on reliability. This is accomplished by combining the statistical methodology with existing technology computer aided design (TCAD) tools. The design of experiment (DoE) technique can be successfully employed to analyze the effect of manufacturing variations on the SOI device reliability. As an example, the reliability analysis and the statistical analysis have performed on SOI MOS devices (partially depleted and fully depleted SOI) and submicron bulk-Si MOSFET's to verify the applied modeling method.en_US
dc.language.isoen_USen_US
dc.rightsThis published article is made available in accordance with publishers policy. It may be subject to U.S. copyright law.en_US
dc.rights.urihttp://spie.org/publications/journals/guidelines-for-authors#Terms_of_Useen_US
dc.titleSTADIUM SOI/reliability simulator for the analysis of hot-electron and ESD induced degradation in non-isothermal deviceen_US
dc.typeConference Proceedingen_US
dc.identifier.doi10.1117/12.284692


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