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dc.contributor.authorDai, Hang- Ming
dc.contributor.authorSanders, Thomas J.
dc.date.accessioned2017-10-04T15:57:41Z
dc.date.available2017-10-04T15:57:41Z
dc.date.issued2000-07-18
dc.identifier.citationDai, H., & Sanders, T. (2000). 2DEG channel-dependent model for Hg1-xCdxTe based pseudomorphic HEMTs. Paper presented at the Proceedings of SPIE - the International Society for Optical Engineering, , 4042 8-16.en_US
dc.identifier.urihttp://hdl.handle.net/11141/1715
dc.descriptionMCTS, PHEMT, 2DEG, HgCdTe, FEM, AAFEMen_US
dc.description.abstractHgCdTe has emerged as an important electronic material because of its IRFPA applications. Technologies for growing the material are advanced and current sources for the material are more readily available than in the past. This brings an advantage to the manufacturing other types of HgCdTe devices. PHEMTs are attractive as applications of high-speed devices. In this paper, a model for PHEMT devices by using Hg1 Cd1Te as device materials is presented. High digital performance of the device is expected because electron mobility ofthe material is very high at low temperatures.en_US
dc.language.isoen_USen_US
dc.rightsThis published article is made available in accordance with publishers policy. It may be subject to U.S. copyright law. © (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE).en_US
dc.rights.urihttp://spie.org/publications/journals/guidelines-for-authors#Terms_of_Useen_US
dc.title2DEG channel-dependent model for Hg1-xCdxTe based pseudomorphic HEMTsen_US
dc.typeConference Proceedingen_US
dc.identifier.doi10.1117/12.391910


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