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dc.contributor.advisorMbah, Jonathan C.
dc.contributor.authorKazuva, Chengeto
dc.date.accessioned2017-05-25T14:09:06Z
dc.date.available2017-05-25T14:09:06Z
dc.date.issued2017-05
dc.identifier.urihttp://hdl.handle.net/11141/1450
dc.descriptionThesis (M.S.) - Florida Institute of Technology, 2017en_US
dc.description.abstractThis thesis is a comparison study of the performance of plain tungsten oxide (WO₃) thin films and tungsten oxide thin films sensitized with zinc telluride (ZnTe) as photoelectrocatalysts. Tungsten oxide and zinc telluride are semiconductors which were prepared on indium tin oxide (ITO) coated glass, and subsequently studied for water splitting applications. The main method of synthesis employed was electrochemical deposition. Tungsten oxide thin films were deposited from a precursor solution of peroxotungstic acid while the zinc telluride thin films were deposited from a solution containing dissolved zinc sulfate heptahydrate, sulfuric acid and tellurium dioxide. Surface morphology, film composition and electrochemical properties were investigated using scanning electron microscopy, (SEM), energy dispersive spectroscopy (EDS), and electrochemical impedance spectroscopy, (EIS) respectively. The sensitization of WO₃ using zinc telluride showed an improvement in the water splitting capabilities of the thin films as shown by the chronoamperometry curves.en_US
dc.format.mimetypeapplication/pdf
dc.language.isoen_USen_US
dc.rightsCopyright held by author.en_US
dc.titleASSESSING THE EFFECTS OF SENSITIZING TUNGSTEN OXIDE WITH ZINC TELLURIDEen_US
dc.typeThesisen_US
dc.date.updated2017-05-15T16:04:28Z
thesis.degree.nameMaster of Science in Chemical Engineeringen_US
thesis.degree.levelMastersen_US
thesis.degree.disciplineChemical Engineeringen_US
thesis.degree.departmentChemical Engineeringen_US
thesis.degree.grantorFlorida Institute of Technologyen_US
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